Growth and properties of high quality A-(Si, Ge):H alloys using helium and hydrogen dilutionDALAL, Vikram L; YONG LIU; SHARMA, Puneet et al.sans titre. 2002, pp 1154-1157, isbn 0-7803-7471-1, 4 p.Conference Paper

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Ge surface segregation during Si_1-xGe_x(011) gas-source molecular beam epitaxy from Si₂H₆ and Ge₂H₆TAYLOR, N; KIM, H; GREENE, J. E et al.Surface science. 2001, Vol 475, Num 1-3, pp 171-180, issn 0039-6028Article

Surface crystallization of ion-implantation damaged Si₉₅Ge₅ on Si(100)PETÖ, G; HORVATH, Z. E; KANSKI, J et al.Applied surface science. 2000, Vol 166, pp 428-432, issn 0169-4332Conference Paper

Alloyed Ge(Si)/Si(001) islands : The composition profile and the shape transformationLANG, C; COCKAYNE, D. J. H; NGUYEN-MANH, D et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155328.1-155328.9, issn 1098-0121Article

Nanotechnology: Thin solid films roll up into nanotubesSCHMIDT, Oliver G; EBERL, Karl.Nature (London). 2001, Vol 410, Num 6825, issn 0028-0836, p. 168Article

3rd International SiGe Technology and Device Meeting (Princeton, New Jersey, 15-17 May 2006)STURM, J; FITZGERALD, E; KOESTER, S et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, 245 p.Conference Proceedings

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Serial and Parallel Si, Ge, and SiGe Direct-Write with Scanning Probes and Conducting StampsVASKO, Stephanie E; KAPETANOVIC, Adnan; TALLA, Vamsi et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2386-2389, issn 1530-6984, 4 p.Article

Ion, sputter and useful ion yields for accurate quantification of Si_1-xGe_x(O < x < 1) using ultra low energy O₂⁺ SIMSMORRIS, R. J. H; DOWSETT, M. G.Surface and interface analysis. 2011, Vol 43, Num 1-2, pp 543-546, issn 0142-2421, 4 p.Conference Paper

In situ X-ray investigation of SiGe/Si islands grown by liquid phase epitaxyDEITER, S; HANKE, M; EISENSCHMIDT, C et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 8, pp 1709-1713, issn 1862-6300, 5 p.Conference Paper

Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffractionMEDUNA, M; CAHA, O; KEPLINGER, M et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 8, pp 1775-1779, issn 1862-6300, 5 p.Conference Paper

Investigation of strain relaxation mechanism in small SiGe clustersMARIM, L. R; UENO, L. T; MACHADO, F. B. C et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 10, pp 3601-3611, issn 0370-1972, 11 p.Article

Impact of 100 MeV Au on the surface of relaxed Si_0.5Ge_0.5 alloy films studied by atomic force microscopyKANJILAL, A; LUNDSGAARD HANSEN, J; NYLANDSTED LARSEN, A et al.Surface science. 2006, Vol 600, Num 15, pp 3087-3092, issn 0039-6028, 6 p.Article

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A high-power solid-state p⁺-n-n⁺ diode for picosecond-range closing switchingFEI ZHANG; LINA SHI; CHENGFANG LI et al.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 991-997, issn 0268-1242, 7 p.Article

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Interstitial-carbon-related defects in relaxed SiGe alloy : the effect of alloyingMESLI, A; LARSEN, A. Nylandsted.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 22, pp S2170-S2184, issn 0953-8984Conference Paper

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Photoluminescence characterization of defects in Si and SiGe structuresHIGGS, V; CHIN, F; WANG, X et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 49, pp 10105-10121, issn 0953-8984Article

A study of Si_1-xGe_x/Si quantum-well intermixing by photocurrent spectroscopyCHENG LI; QINQING YANG; YONGHAI CHEN et al.Thin solid films. 2000, Vol 359, Num 2, pp 236-238, issn 0040-6090Article

The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperaturesENDRES, J; DANIS, S; BAUER, G et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 17, issn 0953-8984, 175802.1-175802.7Article

Flattening of low temperature epitaxial Gel_1―xSn_x/Ge/Si(100) alloys via mass transport during post-growth annealingWEI WANG; SHAOJIAN SU; JUN ZHENG et al.Applied surface science. 2011, Vol 257, Num 9, pp 4468-4471, issn 0169-4332, 4 p.Article